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| 2SD2652 Transistors General purpose amplification (12V, 1.5A) 2SD2652 !Application Low frequency amplifier !External dimensions (Units : mm) (1) 0.65 0.65 0.7 0.1Min. 0~0.1 !Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) 200mV At IC = 500mA / IB = 25mA 0.3 (3) 1.25 2.1 0.15 0.2 (2) Each lead has same dimensions ROHM : UMT3 Abbreviated symbol : EW EIAJ : SC-70 JEDEC : SOT-323 0.9 1.3 2.0 (1) Emitter (2) Base (3) Collector !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Single pulse, PW=1ms !Packaging specifications Limits 15 12 6 1.5 3 200 150 -55~+150 Unit V V V A A mW C C Type 2SD2652 Package Code Basic ordering unit (pieces) Taping T106 3000 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance 1 Pulsed Symbol Min. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 15 12 6 - - - 270 - - Typ. Max. Unit - - - - - 80 - 400 12 - - - 100 100 200 680 - - V V V nA nA mV - pF IC=10A IC=1mA IE=10A VCB=15V VEB=6V Conditions IC/IB=500mA/25mA VCE/IC=2V/200mA VCB=10V, IE=0A, f=1MHz 1 MHz VCE=2V, IE=-200mA, f=100MHz 1 2SD2652 Transistors !Electrical characteristic curves BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=100C Ta=-40C Ta=25C Ta=100C IC/IB=20/1 IC/IB=20 Pulsed VBE(sat) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 10 1 Ta=25C VCE=2V DC CURRENT GAIN : hFE 1 Ta=25C Ta=-40C 0.1 100 0.1 Ta=100C Ta=25C Ta=-40C IC/IB=50/1 VCE(sat) 0.01 0.01 IC/IB=20/1 IC/IB=10/1 10 0.001 VCE=2V Pulsed 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 10 COLLECTOR CURRENT : IC (A) 1 TRANSITION FREQUENCY : fT (MHz) VCE=2V Pulsed 1000 1000 Ta=25C VCE=2V f=100MHz SWITCHING TIME : (ns) 100 tstg Ta=100C 0.1 Ta=25C 100 10 tdon tf tr 0.01 Ta=-40C 0.001 0 0.5 1.0 1.5 10 -0.001 VCE=2V Ta=25C Pulsed -0.01 -0.1 -1 -10 1 0.01 0.1 1 10 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Cib IE=0A f=1MHz Ta=25C 10 COLLECTOR CURRENT : IC (A) 1m s Cob 1 PW 10 ms 10 =1 00 ms DC Op era tio 0.1 n 1 0.1 1 10 100 Ta=25C Single Pulse 0.01 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Safe Operating Area |
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